SiC Device Process Development Leader - Hitachinaka, 日本 - Renesas Electronics

説明

Job Description

In our power semiconductor business, we are focusing on IGBTs and Power MOSFETs for the rapidly growing xEV market and are increasing our production capacity to meet the strong demand.

In addition to these, we are planning to develop higher performance SiC MOSFETs and launch them in the market as soon as possible.

We are looking for engineers who can lead the development of next-generation SiC devices superior to competitors, with our device and process engineers who are leading the field.

SiC Device Process Development Leader
1.Wafer process development project management from concept study to mass production technology establishment
2.Collaboration and negotiation with related companies
3.Direction on device structure design and process flow construction.
4.Coordination and negotiation with various departments such as element process technology (frontside/backside process), business, quality assurance, etc.
Qualifications


Required:
1. two years experience in project management of power device development
2. three years experience in SiC device structure design and process development
3. three years experience in 150mm or 200mm wafer process development
4. Ability to give presentations in English
5. Ability to do business communication in Japanese

Nice-to-Have
1. Experience with using TCAD
2. Expertise on IGBT, SiC module packaging.
3. Expertize on inverter system.